1 An Abrupt Si P N Junction Has The Following Properties At 300k P Side N Side Units 1549316

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1. An abrupt Si p-n junction has the following properties at 300K:

p-side n-side units

Draw an equilibrium band diagram for this junction, including numerical values for the Fermi level position relative to the intrinsic level on each side of the junction. Find the contact potential from the diagram and compare with the analytical expression for.

 
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